SSM6N55NU
MOSFETs Silicon N-Channel MOS
SSM6N55NU
1.
Applications
• • Power Management Switches DC-DC Converters
2.
Features
(1) (2) 4.
5V gate drive
voltage.
Low drain-source on-resistance : RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.
5 V)
3.
Packaging and Pin Configuration
1.
Source1 2.
Gate1 3.
Drain2 4.
Source2 5.
Gate2 6.
Drain1
UDFN6
Start of commercial production
1
2011-11 2014-04-04 Rev.
2.
0
SSM6N55NU
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) (Q1,Q2 Common)
Characteristics Drain-source
voltage Gate-source
voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Channel temperature Storage temp...