SSM6P36TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P36TU
○ Power Management Switches
• • 1.
5-V drive Low ON-resistance: Ron = 3.
60 Ω (max) (@VGS = -1.
5 V) : Ron = 2.
70 Ω (max) (@VGS = -1.
8 V) : Ron = 1.
60 Ω (max) (@VGS = -2.
8 V) : Ron = 1.
31 Ω (max) (@VGS = -4.
5 V)
0.
65 0.
65 2.
0±0.
1 1.
3±0.
1 1 2 3
Unit: mm
2.
1±0.
1 1.
7±0.
1
Absolute Maximum Ratings (Ta = 25 °C)
Characteristics Drain-source
voltage Gate-source
voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating -20 ±8 -330 -660 500 150 −55 to 150 Unit V
5 4
mA mW °C °C
0.
7±0.
05
V
1.
Source1
4.
Source2 5.
Gate2 6.
Drain1
...