SSM6P40TU
TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type
SSM6P40TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• • • 4.
0 V drive P-ch, 2-in-1 Low ON-resistance: Unit: mm
2.
1±0.
1 1.
7±0.
1 0.
65 0.
65 1 2 3 6 5 4 0.
166±0.
05
Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common)
Characteristics Drain-source
voltage Gate-source
voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating -30 ± 20 -1.
4 -2.
8 500 150 −55 to150 Unit V V A mW °C °C 1.
Source1 2.
Gate1 3.
Drain2 4.
Source2 5.
Gate2 6.
Drain1
0.
7±...