SSM6P41FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V)
SSM6P41FE
○ Power Management Switches
• 1.
5-V drive • Low on-resistance
: RDS(ON) = 1.
04 Ω (max) (@VGS = -1.
5 V) : RDS(ON) = 0.
67 Ω (max) (@VGS = -1.
8 V) : RDS(ON) = 0.
44 Ω (max) (@VGS = -2.
5 V) : RDS(ON) = 0.
30 Ω (max) (@VGS = -4.
5 V)
1.
6±0.
05 1.
2±0.
05
Unit: mm
1.
6±0.
05 1.
0±0.
05 0.
5 0.
5
0.
2±0.
05
0.
12±0.
05
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)
1
6
Characteristic
Drain-source
voltage
Gate-source
voltage
Drain current
DC Pulse
Power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS
-20
V
VGSS
±8
V
ID
-720 mA
IDP
-1440
PD (Note1)
150
m...