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SSM9915H,J
N-CHANNEL ENHANCEMENT-MODE POWER
MOSFET
Low on-resistance Capable of 2.
5V gate drive Low drive current Simple drive requirement G S D
BV DSS R DS(ON) ID
20V 50mΩ 20A
Description
Power
MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=125℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current
1
Rating 20 ± 10 20 16 41 26 0.
2 -55 to 150...