PRODUCT SUMMARY
Low on-resistance Capable of 2.
5V gate drive Surface mount package
DESCRIPTION
SSM9926TGO
N-CHANNEL ENHANC8 EMENT MODE POWER
MOSFET
A
t
D1 D2
G1 G2 S1
S2
The Advanced Power
MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
BVDSS RDS(ON) ID
8
20V 32mĪ© 4.
7A
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
G2 S2 S2 D2
TSSOP-8
G1 S1
S1 D1
Symbol VDS VGS ID@TA=25ā ID@TA=70ā IDM PD@TA=25ā
TSTG TJ
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Line...