SSS2301A
P-Channel Enhancement Mode
MOSFET
Product Summary
VDS (V)
-20V
SOT-23
D
ID (A)
-2.
3A
RDS(ON) (mΩ) Max 130 @VGS = -4.
5V
G
190 @VGS = -2.
5V
S
D
FEATURES
Super high density cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
Pb free.
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
-20 + -8 -2.
3 -8 -1.
25 1.
25 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Thermal Resistance, Ju...