SSS5N20
Dual N-Channel Enhancement Mode
MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 30 @VGS = 4.
5V 20V 4A 45 @VGS = 2.
5V
D1 (2, 5)
1
TSOP-6
D2 (2, 5)
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Surface Mount package.
G1(6) S1(1) G2(4) S2(3)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous @ TJ = 25 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
20 + - 10 4 25 2 1.
25 -55 to 150
Unit
V V A A A W
o
Drain-Source Diode Forward Current Maximum Power Dissipation
a
IS PD TJ, TSTG
Operating Junction and Storage Temperature Range
C
THERMAL CHARACTERISTICS
Therm...