SSW1N60B / SSI1N60B
November 2001
SSW1N60B / SSI1N60B
600V N-Channel
MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supplies.
Features
• • • • • • 1.
0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.
9 nC) Low Crss ( typical 3.
6 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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