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P Channel Enchancement Mode
MOSFET -3.
5A DESCRIPTION
ST2305
The ST2305 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION SOT-23-3L 3
FEATURE z -10V/-3.
5A, RDS(ON) = 50m-ohm @VGS = -4.
5V z -10V/-3.
0A, RDS(ON) = 70m-ohm @VGS = -2.
5V z -10V/-2.
0A, R...