ST2309ES
P Channel Enhancement Mode
MOSFET
-3.
0A
DESCRIPTION
ST2309ES is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3 D G 1
S 2
FEATURE
! -60V/-3.
0A, RDS(ON) = 160m-ohm @VGS = -10V
! -60V/-1.
5A, RDS(ON) = 200m-ohm @VGS = -4.
5V
! Sup...