ST2317S23RG
P Channel Enhancement Mode
MOSFET
-5.
0A
DESCRIPTION
ST2317S23RG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low
voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are required in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L
3 D G 1
S 2
1.
Gate 2.
Source 3.
Drain
PART MARKING SOT-23-3L
3
17YW
12 Y: Year Code W: Week Code
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