ST36015
Datasheet
20 W, 28 V, 0.
7 to 3.
6 GHz RF power LDMOS transistor
1
3 2
E2
Pin connection
Pin
Connection
1
Drain
2
Source (bottom side)
3
Gate
Features
Order code
Frequency
VDD
POUT
Gain
Efficiency
ST36015
3450 MHz
28 V 20 W
12.
4 dB
42%
• High efficiency and linear gain operations • Integrated ESD protection • Internal input matching for ease of use • Large positive and negative gate-source
voltage range for improved class C
operation • In compliance with the European directive 2002/95/EC
Applications
• Telecom and wideband communication • Industrial, scientific and medical (ISM)
Description
The ST36015 is a 20 W, 28 V, internally matched LDMOS transistor design...