STB1082Green
Product
Sa mHop Microelectronics C orp.
Ver 1.
0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
100V 38A 30 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-263 package.
D
GS S TB S E R IE S T O -263(DD-P AK )
D
G S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source
Voltage
VGS Gate-Source
Voltage
ID
Drain Current-Continuous c
TC=25°C TC=70°C
100 ±20 38 31.
8
IDM -Pulsed a c
112
EAS Single Pulse Avalanche Energy d
100
TC=25°C PD Maximum Power Dissipation
TC=70°C
136 95
TJ, TSTG
Operating Junction and Storage Temp...