STB16N90K5
Datasheet
N-channel 900 V, 280 mΩ typ.
, 15 A MDmesh K5 Power
MOSFET in a D²PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
VDS
STB16N90K5
900 V
• Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected
RDS(on) max.
330 mΩ
ID 15 A
Applications
• Switching applications
Description
This very high
voltage N-channel Power
MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effici...