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N-CHANNEL 40V - 3.
9 mΩ - 120A D2PAK/I2PAK/TO-220 STripFET™ II POWER
MOSFET
TYPE STB190NF04/-1 STP190NF04
s s s
STP190NF04 STB190NF04 STB190NF04-1
PRELIMINARY DATA
VDSS 40 V 40 V
RDS(on) 0.
0043 Ω 0.
0043 Ω
ID 120 A 120 A
3 1
TYPICAL RDS(on) =3.
9 mΩ STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
3 12
DESCRIPTION This Power
MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS s HIGH CURENT, HIGH SWITC...