STB23NM60ND-STF23NM60ND STI23NM60ND-STP/W23NM60ND
N-channel 600 V - 0.
150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh™ II Power
MOSFET (with fast diode)
Preliminary Data
Features
com
Type
VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V
RDS(on) max 0.
180 Ω 0.
180 Ω 0.
180 Ω 0.
180 Ω 0.
180 Ω
ID
1
3
3 12
STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND
20 A 20 A 20 A(1) 20 A 20 A
D²PAK
2 1 3
I²PAK
TO-247
3 1 2
1 2 3
1.
Limited by wire bonding ■ ■ ■ ■ ■
The worldwide best RDS(on) * area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities
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