STB28N15Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.
0
PRODUCT SUMMARY
VDSS ID RDS(ON) (mΩ) Max
150V
32A
46 @ VGS=10V 50 @ VGS=4.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-263 package.
D
GS S TB S E R IE S T O -263(DD-P AK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source
Voltage
VGS Gate-Source
Voltage
ID
Drain Current-Continuous c
TC=25°C TC=100°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
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