STB33N60DM6
Datasheet
N-channel 600 V, 115 mΩ typ.
, 25 A, MDmesh™ DM6 Power
MOSFET in a D2PAK package
TAB 2 3 1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
VDS
RDS(on) max.
STB33N60DM6
600 V
128 mΩ
• Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected
ID 25 A
Applications
• Switching applications
Description
This high-
voltage N-channel Power
MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and ...