STB6N65M2, STD6N65M2
N-channel 650 V, 1.
2 Ω typ.
, 4 A MDmesh™ M2 Power
MOSFETs in D2PAK and DPAK packages
Datasheet - preliminary data
Features
TAB
3 1
D2 PAK
TAB
3 1
DPAK
Figure 1.
Internal schematic diagram , TAB
Order codes STB6N65M2 STD6N65M2
VDS RDS(on) max
650 V
1.
35 Ω
ID 4A
• Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power
MOSFETs developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suit...