STC8697Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.
2
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
9.
8 @ VGS=4.
0V 20V 10A 10.
5 @ VGS=3.
8V
15.
0 @ VGS=2.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S mini 8
PIN 1
D2 5 D2 6 D1 7 D1 8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol VDS VGS
ID
IDM
Parameter Drain-Source
Voltage Gate-Source
Voltage
Drain Current-Continuous a
-Pulsed b
TA=25°C TA=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature ...