S TU/D303S
S amHop Microelectronics C orp.
N ov, 16, 2007
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-30V
F E AT UR E S
( m Ω ) Max
ID
-24A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
R ugged and reliable.
S urface Mount P ackage.
E S D P rocteced
D
28 @ V G S = -10V 40 @ V G S = -4.
5V
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TU S E R IE S TO-251(l-P AK)
S
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource
Voltage Gate-S ource
Voltage Drain C urrent-C ontinuous @ Tc=25 C a -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating Junction and S t...