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STU/D3055L2
SamHop Microelectronics Corp.
Feb.
01 2005 ver1.
3
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
20V
FEATURES
(mW)
ID
18A
RDS(ON)
Max
Super high dense cell design for low RDS(ON).
40 @ VGS = 10V 45 @ VGS = 4.
5V
Rugged and reliable.
TO-252 and TO-251 Package.
D
D G S
G D S
G
STU SERIES TO-252AA(D-PAK)
STD SERIES TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter Drain-Source
Voltage Symbol VDS VGS @TC=25 C ID IDM IS PD TJ, TSTG Limit 20 12 18 30 15 50 -55 to 175 Unit V V A A A W C
Gate-Source
Voltage
taS hee t4U
Drain Current-Continuous a -Pulsed
Drain-Source Diode Forward Cu...