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S T U/D3055NL
S amHop Microelectronics C orp.
P reliminary May.
28,2004
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
25V
F E AT UR E S
( m W ) Max
ID
21A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
40@ V G S = 10V 50@ V G S = 4.
5V
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TU S E R IE S TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATINGS
P arameter Drain-S ource
Voltage Gate-S ource
Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300ms Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S to...