Gr Pr
STU/D36L01A
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.
0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
100V
36A
17 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 and TO-251 Package.
G S
STU SERIES TO - 252AA( D- PAK )
G DS
STD SERIES TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source
Voltage
VGS Gate-Source
Voltage
ID Drain Current-Continuous
TC=25°C TC=70°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature R...