®
STD3NB30
N - CHANNEL 300V - 1.
8Ω - 3.
2A - DPAK PowerMESH™
MOSFET
TYPE ST D3NB30
com
s s s s s s
V DSS 300 V
R DS(on) 2Ω
ID 3.
2 A
TYPICAL RDS(on) =1.
8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL (2500 UNITS)
3 1
DPAK TO-252 (Suffix ”T4”)
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power
MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche a...