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STD4N62K3 STU4N62K3
N-channel 620 V, 1.
8 Ω, 3.
8 A SuperMESH3™ Power
MOSFET DPAK, IPAK
Preliminary data
Features
Type STD4N62K3 STU4N62K3
■ ■ ■ ■ ■ ■
VDSS 620 V
RDS(on) max 1.
95 Ω
ID 3.
8 A
Pw 70 W
3 1 2 1 3
100% avalanche tested Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances Improved diode reverse recovery characteristics Zener-protected
DPAK
IPAK
Figure 1.
Internal schematic diagram
D(2)
Application
■
Switching applications
Description
These devices are made using the SuperMESH3™ Power
MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized...