STD4NK80Z-1
Datasheet
N-channel 800 V, 2.
7 Ω typ.
, 3 A SuperMESH Power
MOSFET in an IPAK package
Features
TAB
Order code
VDS
RDS(on) max.
ID
STD4NK80Z-1
800 V
3.
5 Ω
3A
3
2 1
• 100% avalanche tested
• Gate charge minimized
IPAK
• Very low intrinsic capacitance
• Zener-protected
D(2, TAB)
Applications
• Switching applications
G(1)
Description
This high-
voltage device is a Zener-protected N-channel Power
MOSFET developed
S(3)
using the SuperMESH technology by STMicroelectronics, an optimization of the well-
AM01476v1_tab established PowerMESH.
In addition to a significant reduction in on-resistance, this
device is designed to ensure a high level of dv/dt capability for ...