STD96N3LLH6
N-channel 30 V, 0.
0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power
MOSFET
Features
Type STD96N3LLH6
VDSS 30 V
RDS(on) max 0.
0042 Ω
ID 80 A
■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications – Automotive
Description
This product is an N-channel Power
MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power
MOSFET exhibits the lowest RDS(on) in all packages.
3 1
DPAK
Figure 1.
Internal schematic diagram
D (TAB or 2)
G(1)
Table 1.
Device summary Order codes STD96N3LLH6
Mar...