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STE180N10
N - CHANNEL 100V - 5.
5 mΩ - 180A - ISOTOP POWER
MOSFET
TYPE STE180N10
s s s s s
V DSS 100 V
R DS(on) 7 mΩ
ID 180 A
TYPICAL RDS(on) = 5.
5 mΩ 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED
VOLTAGE SPREAD
INDUSTRIAL APPLICATIONS: SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
s
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS V DGR V GS ID ID IDM ( • ) P tot V ISO T stg Tj Parameter Drain-source
Voltage (V GS = 0) Drain- gate
Voltage (R GS = 20 k Ω ) Gate-source
Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) ...