Isc N-Channel
MOSFET Transistor
STF100N10F7
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source
Voltage
100
V
VGSS
Gate-Source
Voltage
±20
V
ID
Drain Current-Continuous@TC=25℃ TC=100℃
45 32
A
IDM
Drain Current-Single Pulsed
180
A
PD
Total Dissipation @TC=25℃
30
W
Tch
Max.
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER...