STF2HNK60Z
Datasheet
N-channel 600 V, 3.
5 Ω typ.
, 2 A SuperMESH Power
MOSFET in a TO-220FP package
23 1 TO-220FP D(2)
G(1)
S(3)
AM01476v1
Features
Order codes
VDS
RDS(on) max.
ID
STF2HNK60Z
600 V
4.
8 Ω
2A
• 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected
Applications
• Switching applications
Description
This high-
voltage device is a Zener-protected N-channel Power
MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding ...