STFI11N60M2-EP
Datasheet
N-channel 600 V, 0.
550 Ω typ.
, 7.
5 A MDmesh™ M2 EP Power
MOSFET in an I²PAKFP package
Features
1 23 I 2 PAKFP (TO-281)
D(2)
Order code
VDS
RDS(on) max.
STFI11N60M2-EP
600 V
0.
595 Ω
• Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected
ID 7.
5 A
Applications
• Switching applications
G(1)
Description
This device is an N-channel Power
MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology.
Thanks to its strip layout and an S(3) AM15572v1_no_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics ...