STFI24NM60N
N-channel 600 V, 0.
168 Ω typ.
, 17 A MDmesh™ II Power
MOSFET in a I²PAKFP package
Datasheet − production data
Features
1 23
I2PAKFP (TO-281)
Figure 1.
Internal schematic diagram
Order codes VDS @Tjmax RDS(on) max.
ID
STFI24NM60N 650 V
0.
19 Ω
17 A
• Fully insulated and low profile package with increased creepage path from pin to heatsink plate
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
' *
6
Description
This device is an N-channel Power
MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power
MOSFET associates a vertical structure to the co...