STT6N3LLH6
N-channel 30 V, 0.
021 Ω typ.
, 6 A STripFET™ VI DeepGATE™ Power
MOSFET in a SOT23-6L package
Datasheet - production data
4 5 6
3 2 1
SOT23-6L
Features
Order code STT6N3LLH6
VDSS RDS(on) max ID PTOT
0.
025 Ω
(VGS= 10 V)
30 V
6 A 1.
6 W
0.
036 Ω
(VGS= 4.
5 V)
• RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses
Figure 1.
Internal schematic diagram
Applications
• Switching applications
Description
This device is an N-channel Power
MOSFET
th
developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power
MOSFET exhibits the lowest RDS(on) in all ...