Green Product
STG8810A
Ver 1.
3
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
14.
5 @ VGS=4.
5V 15.
0 @ VGS=4.
0V 20V 7A 17.
0 @ VGS=3.
7V 19.
5 @ VGS=3.
1V 23.
0 @ VGS=2.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD HBM 2KV.
T S S OP
D 1/D 2 S1 S1 G1 1 2 3 4 8 7 6 5 D 1/D 2 S2 S2 G2
D1
D2
G1
G2
(T OP V IE W)
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous -Pulsed
b a
Limit 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 7...