STGB18N40LZ STGD18N40LZ, STGP18N40LZ
EAS 180 mJ - 390 V - internally clamped IGBT
Features
■ AEC Q101 compliant ■ 180 mJ of avalanche energy @ TC = 150 °C,
L = 3 mH ■ ESD gate-emitter protection ■ Gate-collector high
voltage clamping ■ Logic level gate drive ■ Low saturation
voltage ■ High pulsed current capability ■ Gate and gate-emitter resistor
Application
■ Pencil coil electronic ignition driver
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology.
The built-in Zener diodes between gate-collector and gateemitter provide over
voltage protection capabilities.
The device also exhibits low on-state
voltage drop and low threshold drive for use in automot...