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STGB20NB37LZ
N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
PRELIMINARY DATA
TYPE STGB20NB37LZ
s s s s s s
V CES CLAMPED
V CE(s at) 2.
0 V
IC 20 A
POLYSILICON GATE
VOLTAGE DRIVEN LOW THRESHOLD
VOLTAGE LOW ON-
VOLTAGE DROP HIGH CURRENT CAPABILITY HIGH
VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)
3 1
DESCRIPTION Using the latest high
voltage technology based on patented strip layout, STMicroelectronics has designed an advanced family of IGBTs with outstanding performances.
The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD p...