STGB40H65FB
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Datasheet - production data
TAB
2 3
1 D²PAK
Figure 1: Internal schematic diagram C(2, TAB)
G(1)
E(3)
Features
Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current Low saturation
voltage: VCE(sat) = 1.
6 V (typ.
)
@ IC = 40 A Tight parameter distribution Safe paralleling Low thermal resistance
Applications
Photovoltaic inverters High frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the new HB series of IGBTs, which represents an optimum compromise between cond...