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STGD10NC60H
N-channel 10A - 600V - DPAK Very fast PowerMESH™ IGBT
Features
Type STGD10NC60H
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VCES 600V
IC VCE(sat) (Max)@ 25°C @100°C 2.
5V 10A
3 1
Low on-
voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction susceptibility)
DPAK
Description
Using the latest high
voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) manta in ing a low
voltage drop.
Internal schematic diagram
Applications
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H...