STH12N120K5-2AG
Datasheet
Automotive-grade N-channel 1200 V, 1.
45 Ω typ.
, 7 A, MDmesh K5 Power
MOSFET in an H²PAK‑2 package
TAB
23 1 H2PAK-2
D(TAB)
Features
Order code
VDS
RDS(on) max.
ID
STH12N120K5-2AG
1200 V
1.
9 Ω
7A
• AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested
G(1) S(2, 3)
Applications
• Switching applications
DTG1S23NZ
Description
This very high
voltage N-channel Power
MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring sup...