TAB 23 1
H2PAK-2
D(TAB)
G(1)
STH180N10F3-2
Datasheet
N‑channel 100 V, 3.
9 mΩ typ.
, 180 A STripFET F3 Power
MOSFET in H²PAK‑2 package
Features
Order code
VDS
STH180N10F3-2
100 V
• Ultra low on-resistence • 100% avalanche tested
RDS(on) max.
4.
5 mΩ
ID 180 A
Applications
• Switching applications
Description
This device is an N-channel Power
MOSFET developed using STripFET F3 technology.
It is designed to minimize on-resistance and gate charge to provide superior switching performance.
S(2,3)
NCHG1DTABS23
Product status link STH180N10F3-2
Product summary
Order code
STH180N10F3-2
Marking
180N10F3
Package
H2PAK-2
Packing
Tape and reel
DS7317 - Rev 3 - March 2022 For further...