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STH200N55F3-2
N-channel 55 V, 1.
8 mΩ, 160 A, H2PAK STripFET™ III Power
MOSFET
Preliminary data
Features
Type STH200N55F3-2 VDSS 55 V RDS(on) max 2.
6 mΩ ID (1) 160 A
2
1.
Current limited by package ■ ■
Ultra low on-resistance 100% avalanche tested
3 1
3
Application
■
H²PAK
Switching applications
Description
This STripFET™ III Power
MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance.
Figure 1.
Internal schematic diagram
$
'
3
!-V
Table 1.
Device summary
Order code Marking 200N55F3 Package H²PAK Packaging Tape and reel
STH200N55F3-2
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