STH240N75F3-2, STH240N75F3-6
N-channel 75 V, 2.
6 mΩ typ.
, 180 A STripFET™ III Power
MOSFET in H²PAK-2 and H²PAK-6 packages
Datasheet − production data
Features
Order code
STH240N75F3-2 STH240N75F3-6
VDSS 75 V
RDS(on) max.
ID
3.
0 mΩ 180 A
■ Conduction losses reduced ■ Low profile, very low parasitic inductance
Applications
■ Switching application
Description
These devices are N-channel enhancement mode Power
MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance.
TAB
H2PAK-2
7
1
H2PAK-6
Figure 1.
Internal schematic diagram
D(TAB)
D(TAB)
G(1)
G(1)
...