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STH260N6F6-2 STP260N6F6
N-channel 60 V, 0.
0016 Ω, 180 A TO-220, H2PAK-2 STripFET™ DeepGATE™ VI Power
MOSFET
Preliminary data
Features
Type STH260N6F6-2 STP260N6F6
■ ■ ■ ■
VDSS 60 V 60 V
RDS(on) max 0.
002 Ω 0.
003 Ω
ID 180 A 120 A
3 1
3
N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance
2
2
H2PAK-2 TO-220
1
Application
■
Switching applications
Figure 1.
Internal schematic diagram
Description
This STripFET™ DeepGATE™ Power
MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances.
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