STH290N4F6-2AG, STH290N4F6-6AG
Automotive-grade N-channel 40 V, 1.
3 mΩ typ.
, 180 A STripFET™ F6 Power
MOSFETs in H²PAK-2 and H²PAK-6 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
STH290N4F6-2AG 40 V
STH290N4F6-6AG
RDS(on) max.
1.
7 mΩ
ID 180 A
PTOT 300 W
• Designed for automotive applications and AEC-Q101 qualified
• Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss
Applications
• Switching applications
Description
This device is an N-channel Power
MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
The resulting Power
MOSFET exhibits very low RDS(o...