Gre r Pro
STK600
Ver 1.
0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
60V
ID
0.
8A
R DS(ON) ( Ω) Max
0.
9 @ VGS=10V 1.
3 @ VGS=4.
5V
FEATURES Super high dense cell design for low R DS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
D
D
G
S
SOT-89
D G
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous -Pulsed
b d a
Limit 60 ±20 TA=25°C TA=70°C 0.
80 0.
65 4.
4 0.
56 TA=25°C TA=70°C 1.
25 0.
8 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
Op...