Semiconductor
STK630F
Power
MOSFET
Features
• Avalanche rugged technology.
• Low input capacitance.
• Low leakage current : 10 ㎂ (Max.
) @ VDS=200V.
• Low RDS(on) : 0.
30Ω(Typ.
)
Ordering Information
Type NO.
STK630F Marking STK630
Package Code TO-220F-3L
Outline Dimensions
w
w
w
t a .
D
S a
e h
U 4 t e
.
c
m o
unit :
mm
PIN Connections 1.
Gate 2.
Drain 3.
Source
KST-H036-002
w
w
w
.
D
a
S a t
e e h
U 4 t
m o .
c
1
STK630F
Absolute maximum ratings
Characteristic
Drain-source
voltage Gate-source
voltage Drain current (DC) * Drain current (Pulsed) * Drain power dissipation (TC=25℃) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy P...