STL20N6F7
N-channel 60 V, 0.
0046 Ω typ.
, 20 A STripFET™ F7 Power
MOSFET in a PowerFLAT™ 3.
3x3.
3 package
Datasheet - production data
1 2 3 4
PowerFLAT™ 3.
3x3.
3 HV
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8 76 5
G(4)
Features
Order code STL20N6F7
VDS 60 V
RDS(on) max 0.
0054 Ω
ID 20 A
• Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness
Applications
• Switching applications
Description
This N-channel Power
MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge f...