STL23NM50N
N-channel 500 V, 0.
170 Ω typ.
, 14 A MDmesh™ II Power
MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet — production data
Features
Type STL23NM50N
VDSS @ TJmax
550 V
RDS(on) max
0.
210 Ω
ID 14 A (1)
1.
The value is rated according to Rthj-case
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power
MOSFET developed using the second generation of MDmesh™ technology.
This revolutionary Power
MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the mo...